Measurement of Surface Vacuum Potential from the Energy Spectrum of the Secondary Electron in the Scanning Electron Microscope

スポンサーリンク

概要

• 論文の詳細を見る

• A measurement method for determining the contact potential between the specimen and the analyzer from an S-curve (an integrated curve of secondary electron energy distribution) in the scanning electron microscope is described. The measured S-curve is best-fitted to the calculated S-curve assuming the secondary electron energy distribution and the instrumental function of the analyzer. The work function of the retarding electrode in the analyzer was calibrated by the use of thermionic emission from a heated W filament. The work function of acid-cleaned Cu was 4.71 V, while that of untreated Al was 3.64 V. It is shown that the previously reported charging characteristics of an electrically floating gate in the MOS structure under electron beam irradiation are well explained by taking account of the surface vacuum potentials. The work function of insulator SiO_2 was estimated to be on the order of 7 V.

• 社団法人応用物理学会の論文
• 1991-04-15

著者

• FUJIOKA Hiromu

  Department of Information Systems Engineering, Faculty of Engineering, Osaka University

• NAKAMAE Koji

  Department of Information System Engineering, Graduate School of Information Science and Technology,

• Nakamae K

  Osaka Univ. Suita‐shi Jpn

• Nakamae Koji

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• URA Katsumi

  Department of Electronic Engineering, Faculty of Engineering, Osaka University

• Ura K

  Osaka Univ. Osaka Jpn

• Fujioka H

  Osaka Univ. Suita‐shi Jpn

• Fujioka Hiromu

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Ura Katsumi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Ura Katsumi

  Department of Electrical and Electronic Engineering, Osaka Sangyo University

関連論文

• Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation
• New Approach of Laser-SQUID Microscopy to LSI Failure Analysis
• Isochronous Detector for Real-Time Electron Beam Testing : Inspection and Testing
• Observation of Nuclear Excitation by Electron Transition (NEET) in ^Au with a Nanosecond Stroboscopic Electron Spectrometer
• Channel Mixing Effect on SN-Ratio of Electron Energy Loss Spectrum in Parallel Detector
• Position Control of Electron Energy Loss Spectrum in Case of Accelerating-Voltage Fluctuation
• Development of a new 3 MV ultra-high voltage electron microscope at Osaka University
• Electron Energy Analysis of Vacuum Discharge in High-Voltage Accelerator Tube
• Three-Dimensional Eye Movement Simulator Extracting Instantaneous Eye Movement Rotation Axes, the Plane Formed by Rotation Axes, and Innervations for Eye Muscles(Medical Engineering)
• EB Tester Line Delay Fault Localization Algorithm for Combinational Circuits Considering CAD Layout(Special Issue on Test and Verification of VLSI)
• Evaluation of Inspection Process Strategies through VLSI Wafer-Process Simulation Analysis
• C-12-5 Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution
• Fault Diagnosis Technique for Yield Enhancement of Logic LSI Using I_DDQ(Special Section on Reliability Theory and Its Applications)
• Verification of Wafer Test Process Simulation in VLSI Manufacturing System and Its Application
• Effect of 300mm Wafer Transition and Test Processing Logistics on VLSI Manufacturing Final Test Process Efficiency and Cost
• Effect of Express Lots on Production Dispatching Rule Scheduling and Cost in VLSI Manufacturing Final Test Process
• Hierarchical Fault Tracing for VLSIs with Bi-directional Busses from CAD Layout Data in the CAD-Linked EB Test System
• Automatic Transistor-Level Performance Fault Tracing by Successive Circuit Extraction from CAD Layout Data for VLSI in the CAD-Linked EB Test System
• Matching of DUT Interconnection Pattern with CAD Layout in CAD-Linked Electron Beam Test System (Special Issue on LSI Failure Analysis)
• Automatic Tracing of Transistor-Level Performance Faults with CAD-Linked Electron Beam Test System
• Time- and Space-Focusing Detector System for Real-Time Electron Beam Testing
• Measurement of Surface Vacuum Potential from the Energy Spectrum of the Secondary Electron in the Scanning Electron Microscope
• A New CD Measurement Method Linked with the Electrical Properties of Devices
• Unified representation of optical properties for electrostatic lenses

もっと見る 閉じる

スポンサーリンク