A New CD Measurement Method Linked with the Electrical Properties of Devices

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概要

• 論文の詳細を見る

• This paper describes a new measurement method of a CD-SEM with nanometer-level precision and good correlation with electrical characteristics for an actual device of ultra-large-scale integration (ULSI). With the decrease in feature size, the pattern to be measured tends to become a curved shape. In order to measure such a pattern within measurement precision on the order of 5 nm, two-dimensional measurement is effective. Here we report a new measurement algorithm featuring that the critical dimension is derived from the value of the area of a measurement pattern. We apply this measurement method to actual device of 64-Mbit DRAM and confirm the reproducibility of 3.6 nm for the gate linewidth measurement, and that of 5.6 nm for the hole diameter measurement. Furthermore, we verify that the measurement values of the gate linewidth have a strong correlation with the threshold voltage and those of the hole diameter also have a strong correlation with the contact resistance, respectively.

• 社団法人電子情報通信学会の論文
• 1999-07-25

著者

• Fujioka Hiromu

  Department Of Information Systents Engineering Faculty Of Engineering Osaka University

• Fujioka Hiromu

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Miyoshi Motosuke

  Integrated Circuit Advanced Process Technology Department Toshiba Corp.

• KOMATSU Fumio

  Integrated Circuit Advanced Process Technology Department, Toshiba Corp.

• Komatsu Fumio

  Integrated Circuit Advanced Process Technology Department Toshiba Corp.

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• A New CD Measurement Method Linked with the Electrical Properties of Devices

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