Deep Impurity Levels of Cobalt in Silicon
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概要
- 論文の詳細を見る
It has been believed until now that cobalt in silicon forms an acceptor level at around E_c-0.53 eV and a donor level at around E_v+0.35 eV. However, it is found that an acceptor level at E_c-(0.40±0.02)eV and a donor level at E_v+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.
- 社団法人応用物理学会の論文
- 1990-08-20
著者
-
Hashimoto Kimio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
-
Miyagawa Tsuyoshi
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
-
Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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MIYAGAWA Tsuyoshi
Department of Electrical Engineering, Faculty of Engineering, Kyushu University:(Present address)Canon Inc. Component Development Center
-
TSUMORI Yasuo
Department of Electrical Engineering, Faculty of Engineering, Kyushu University:(Present address)Nippon Steel Corp. Electronics Labs.
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