Annealing of Supersaturated Cobalt in Silicon
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概要
- 論文の詳細を見る
The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100℃. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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Hamamoto K
Univ. Tokyo Tokyo Jpn
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HASHIMOTO Kouji
Department of General Pediatrics and Pediatric Rheumatology, Nihon University Nerima-Hikarigaoka Hos
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Hashimoto Kimio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Suwaki Hideo
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Nakashima Hiroshi
Department Of Cancer Therapy And Research Graduate School Of Medical Sciences Kyushu University
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Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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