NbN/MgO/NbN Josephson Junctions for Integrated Circuits
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概要
- 論文の詳細を見る
Characteristics of the NbN/MgO/NbN Josephson junction for integrated circuits have been investigated. The deposition process of the MgO film for the tunnel barrier was systematically investigated to obtain the controllability of the Josephson critical current density. The reproducibility of the Josephson critical current density was improved to ±28% with the critical current density of 610 A/cm^2 and ±20% with the critical current density of 16 kA/cm^2. The uniformity of the Josephson critical current density across a 3 cm-square area on the substrate was improved to ±12% with the critical current density of 650 A/cm^2.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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NAKAGAWA Hiroshi
National Institute of Advanced Industrial Science and Technology
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NAKAGAWA Hiroshi
Electrotechical Laboratory (ETL)
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AOYAGI Masahiro
Electrotechical Laboratory (ETL)
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Takada S
Saitama University Faculty Of Engineering
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Takada Susumu
Electrotechnical Laboratory
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Takada S
Saitama Univ. Urawa‐shi Jpn
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Aoyagi Minoru
Electronics Engineering Group Nissan Motor Co. Ltd
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Nakagawa Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Nakagawa H
Univ. Tokyo Tokyo Jpn
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Kurosawa Itaru
Electrotechnical Laboratory
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