非等温場におけるエネルギー輸送を考慮した半導体デバイスシミュレーション

概要

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Recently, as the size of a semiconductor device reduces to the submicrometer dimension, it is necessary to review the conventional device modeling based on a transport model which stipulates the same constant temperature for the carriers and the lattice. In this paper, we report effects of non-equilibrium transport on MOSFET characteristics, based on the device simulation which consistently takes account of both carrier and lattice heatings. A new energy-dependent mobility formula is derived for this purpose. In the solution of the energy balance equation, the pseudo-linearization is adopted, and the differential terms which depend on the carrier temperature, are added to the matrix coefficient. This results in a stability and contributes to a faster convergence of the simulation. On the other hand, device characteristics based on this model are compared with those obtained by other conventional transport models. We found that carrier velocity based on the conventional energy transport model is slightly overestimated as compared with our result, due to the negligence of the lattice heating effect. In addition, the inclusion of the energy transport leads to an increase in the lattice temperature on the whole, considering the fact that the heat generation extends deeply into the substrate.
日本シミュレーション学会の論文
1994-12-15