自己発熱と熱相互作用を考慮した半導体デバイスの数値シミュレーション

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As the sizes of a semiconductor device and an integrated circuit decrease, the temperature inside a transistor becomes very high. Transistors designed without considering thermal effects may give rise to hot spots which eventually cause unrecoverable changes in their electrical characteristics. To cope with this situation, it is necessary to take account of the transistors' thermal characteristics while considering their electrical behavior. In this paper, we report a numerical simulation of semiconductor devices taking account of the self heating effect of each individual transistor as well as the mutual heating effect induced from other devices. The simulation is realized by a four-step calculation stages : 1) calculating the total dissipating power of each transistor ; 2) estimating temperature distribution inside the entire circuit by considering each transistor as a lumped heat source ; 3) extracting the temperature distribution around a single transistor based on data obtained in 2) ; 4) calculating elecrto-thermal chracteristics using the nonisothermal device simulator based on the boundary conditions just extracted. The simulation shows that the temperature inside an integrated chip significantly depends on the layout of a circuit. In addition, it is shown that the electrical characteristics of a transistor vary due to the heat induced from other devices, even if its electrical and geometrical conditions remain unchanged.
日本シミュレーション学会の論文
1998-03-15

自己発熱と熱相互作用を考慮した半導体デバイスの数値シミュレーション

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