Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate (Special Issue on Microelectronic Test Structure)

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概要

• 論文の詳細を見る

• Threshold voltage shift in high frequency operation of 0.3μm and 0.35μm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.

• 社団法人電子情報通信学会の論文
• 1996-02-25

著者

• Asada Kunihiro

  Faculty Of Engineering And Vlsi Design And Education Center (vdec) The University Of Tokyo

• ITO Hiroshi

  Faculty of Engineering, Yamanashi University

• Ito Hiroshi

  Faculty of Computer Science & Technology, Kyushu Institute of Technology

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