GaNベースの透明磁性半導体の作製と特性(<特集>「磁性薄膜作製技術」)

概要

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After a brief introduction to semiconductor spintronics and the necessity of developing room-temperature ferromagnetic semiconductors, as well as the present status of the development of magnetic semiconductors, this paper describes the growth and characterization of transition-metal(TM)- and rare-earth(RE)-doped GaN-based diluted magnetic semiconductors. X-ray diffraction and extended X-ray absorption fine structure (EXAFS) measurements showed no phase-separation and revealed that the TM and RE atoms occupy Ga sites. TM-doped GaCrN showed ferromagnetic characteristics at 7-400K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field curves at all measurement temperatures. Photoluminescence (PL) emission was observed from GaCrN. RE-doped GaGdN and GaEuN also showed ferromagnetic characteristics even at room temperature, while GaDyN showed ferrimagnetic-like characteristics. Sharp PL emission was observed from RE-doped GaN. Preliminary device applications of these magnetic semiconductors are also described.
社団法人日本磁気学会の論文
2005-09-01