イオンビームスパッタ法による窒素イオン衝撃を用いたFeN薄膜の作製 (<特集>薄膜)

概要

論文の詳細を見る
The relationship between the structure and magnetic properties of FeN films and the deposition conditions in ion beam sputtering with nitrogen bombardment was system-atically investigated. The films were deposited on glass substrates at an ion beam acceleration voltage V_s of 1200 V and at a nitrogen bombardment voltage V_A in the range of 80-2000 V, with the ratio of the arrival rates besed on the nitrogen current density. The ratios of iron to nitrogen were 10 to 1 (R_A of 0.1) and 20 to 1 (R_A of 0.05). The concentrate ion of nitrogen in the films could be controlled by R_A. The vaules for R_A of 0.1 and 0.05 were 9-13 at% and 5-10%, respectively. Pure Fe films with 4πM_s larger than 21.5 kG of a pure Fe were deposited at V_A in the range of 800-200 V for R_A of 0.1. H_c increased with increasing bombardment energy.
1997-04-15