デュアルイオンビームスパッタ法によるFe-N膜の作製とそのアニール特性

概要

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Fe-N films were prepared by dual ion beam sputtering under nitrogen bombardment of 0.1 at the ratio in arrival rate of nitrogen ions to sputtered iron atoms, which value was nearly equal to the Fe_<16>N_2 composition. The voltage for nitrogen bombardment V_A was varied in the range between 80 and 2000 V. The nitrogen content of the Fe-N films was in the range of 8 to 13 at.%. The phase of the films changed from α' to α+γ' at V_A higher than 400 V. The saturation magnetization 4πM_S of the films reached large values in the range of 22 to 23.5 kG at V_A lower than 200 V. The 4πM_S with the α+γ' phase was smaller than pure Fe values. After the films of α' phase prepared at V_A of 100 V were post-annealed, the films showed γ' phase from the annealing temperature T_A of 400℃. The 4πM_S of the films decreased gradually with an increase of T_A in the range higher than 300℃ and was smaller than that of pure Fe at T_A of 400℃
社団法人日本磁気学会の論文
2001-04-15