炭化ケイ素粉末中遊離炭素の定量

概要

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Free carbon in a silicon carbide raw material powder was determined by a combustion method. A sample of 0.5g was weighed out into a 3ml-quartz crucible, and the crucible was placed in a graphite-sealed quartz cell. The cell was raised into the induction furnace combustion tube and heated in oxygen flow at 850°C for 10min by controlling the voltage applied to the furnace. The amount of CO2 produced by the combustion of free carbon in silicon carbide was measured with a thermal conduction detector. Heating at 850°C induced oxidation of silicon carbide. Therefore, the amount of free carbon in silicon carbide was calculated by the correction method in ANSI (B74.15). We also used the correction method based on the change of oxygen concentration. For the sample dried at 105°C for 1h, the values obtained by two correction methods did not agree each other. When the samples were heated at 500°C in an argon atmosphere for 1h, the values obtained by the two correction methods agreed well. Free carbon in five commercial silicon carbide powders were determined to be 0.26-0.92wt%, and the precision (relative standard deviation) was 1-11%.
社団法人日本セラミックス協会の論文
1986-07-01