Effects of Carrier Doping into the Misfit-Layer Compounds (La_<1-y>R_yS)_<1+α>VS_2 (R=Sr and Pb) : Transport and Magnetic Studies

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Transport and magnetic measurements including the magnetic resonance of ^<51>V nuclei have been carried out for misfit-layer compounds (La_<1-y> R_yS)_<1+α>VS_2 (R = Sr and Pb, 0≤y≤1.0). The results indicate that the system is in the Mott insulating state at high temperatures, at least in they region near α/(1+α) which corresponds to the V-valency of + 3. It undergoes a transition with decreasing temperature possibly to a nonmagnetic ground state. With increasing carrier dopinig into this insulating state, the system tends to become metallic and an essentially metallic state is realized in the hole-doped region 0.30≲x=y(1+α)<0.5, where various properties are found to exhibit anomalous behavior similar to the case of high-T_c Cu-oxides.
社団法人日本物理学会の論文
1995-10-15