電子サイクロトロン共鳴加熱プラズマを用いたリニアスパッタリング装置の作動特性

概要

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A linear sputtering source using electron cyclotron resonance (ECR) plasma was developed for reactive sputter deposition with large area. It is composed of slot antennas on a rectangular waveguide with 268 mm long, permanent magnets around the slots and a target within the discharge chamber. Microwaves of 2.45 GHz are radiated from the slots and generated plasma along the waveguide. A sputtering target is placed within the discharge chamber to achieve high deposition rate. Moreover, this plasma source prevents microwave window contamination by sputtered particles. The spatial uniformity of Ar plasma at 0.146 Pa was ± 7.8% within 180 mm in the long direction. By using Ti target and mixture of Ar and N<SUB>2</SUB> gases, TiN films were successfully deposited with thickness uniformity of ± 11.3% within 160 mm and deposition rate of 16.2 nm/min.
日本真空協会の論文