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Vlsi Research And Development Center Oki Electric Industry Co. Ltd. | 論文
- Mechanical Effects of Hafnium and Boron Addition to Aluminum Alloy Films for Submicrometer LSI Interconnects
- Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides
- Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
- Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
- Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
- Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
- Roles of Ions and Radicals in Silicon Oxide Etching
- New Characterization of TiSi_2 Local Wiring Technology and Its Impact on Low Power/High Speed Quarter Micron CMOS
- Effects of Insulator Surface Roughness on Al-Alloy Film Crystallographic Orientation in Al-Alloy/Ti/Insulator Structure
- Influence of Interface Structure between Overlayered Titanium Nitride Film and Aluminum on Multilayered Interconnects
- Interfacial Reactions in Al-Alloy/Ti/Silicon-Dioxide-Based Substrate Structures for Multilayered Interconnects
- Ohmic Contact in Electron Cyclotron Resonance Chemical Vapor Deposition-TiN/Si Structure
- A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
- A Highly Drivable CMOS Design with Very Narrow Sidewall and Novel Channel Profile for 3.3V High Speed Logic Application (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
- Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
- Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures
- Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by In Situ Observation
- In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
- Characterization of Dopant Interdiffusion and Power Reduction on TiSi_2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor