Characterization of Dopant Interdiffusion and Power Reduction on TiSi_2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-04-15

著者

• Ida Jiro

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• OHTOMO Atsushi

  VLSI Research and Development Center, OKI Electric Industry Co., Ltd.

• Ohtomo Atsushi

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

関連論文

• New Characterization of TiSi_2 Local Wiring Technology and Its Impact on Low Power/High Speed Quarter Micron CMOS
• A Highly Drivable CMOS Design with Very Narrow Sidewall and Novel Channel Profile for 3.3V High Speed Logic Application (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
• Characterization of Dopant Interdiffusion and Power Reduction on TiSi_2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor
• Influence of Low Dielectric SiOF Film on Metal Oxide Semiconductor Field Effect Transistor Characteristics and Its Impact on Circuit Performance

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