Influence of Low Dielectric SiOF Film on Metal Oxide Semiconductor Field Effect Transistor Characteristics and Its Impact on Circuit Performance
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Ida Jiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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OHTOMO Atsushi
VLSI Research and Development Center, OKI Electric Industry Co., Ltd.
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Ohtomo Atsushi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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YOSHIMARU Masashi
VLSI Research and Development Center, OKI Electric Industry Co., Ltd.
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Yoshimaru Masashi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
関連論文
- New Characterization of TiSi_2 Local Wiring Technology and Its Impact on Low Power/High Speed Quarter Micron CMOS
- A Highly Drivable CMOS Design with Very Narrow Sidewall and Novel Channel Profile for 3.3V High Speed Logic Application (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
- Characterization of Dopant Interdiffusion and Power Reduction on TiSi_2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor
- Influence of Low Dielectric SiOF Film on Metal Oxide Semiconductor Field Effect Transistor Characteristics and Its Impact on Circuit Performance