Influence of Interface Structure between Overlayered Titanium Nitride Film and Aluminum on Multilayered Interconnects
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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ONODA Hiroshi
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Onoda H
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Onoda Hiroshi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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KAGEYAMA Makiko
VLSI Research and Development Center, OKI Electric Industry Co., Ltd.
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Kageyama M
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Kageyama Makiko
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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TATARA Yasuyuki
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Tatara Yasuyuki
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Onoda Hiroshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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- Effects of Insulator Surface Roughness on Al-Alloy Film Crystallographic Orientation in Al-Alloy/Ti/Insulator Structure
- Influence of Interface Structure between Overlayered Titanium Nitride Film and Aluminum on Multilayered Interconnects
- Interfacial Reactions in Al-Alloy/Ti/Silicon-Dioxide-Based Substrate Structures for Multilayered Interconnects
- Ohmic Contact in Electron Cyclotron Resonance Chemical Vapor Deposition-TiN/Si Structure
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