Interfacial Reactions in Al-Alloy/Ti/Silicon-Dioxide-Based Substrate Structures for Multilayered Interconnects
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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ONODA Hiroshi
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Onoda Hiroshi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Narita Tadashi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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HASHIMOTO Keiichi
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Hashimoto Keiichi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Hashimoto Keiichi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Onoda Hiroshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
関連論文
- Mechanical Effects of Hafnium and Boron Addition to Aluminum Alloy Films for Submicrometer LSI Interconnects
- New Characterization of TiSi_2 Local Wiring Technology and Its Impact on Low Power/High Speed Quarter Micron CMOS
- Effects of Insulator Surface Roughness on Al-Alloy Film Crystallographic Orientation in Al-Alloy/Ti/Insulator Structure
- Influence of Interface Structure between Overlayered Titanium Nitride Film and Aluminum on Multilayered Interconnects
- Interfacial Reactions in Al-Alloy/Ti/Silicon-Dioxide-Based Substrate Structures for Multilayered Interconnects
- Ohmic Contact in Electron Cyclotron Resonance Chemical Vapor Deposition-TiN/Si Structure
- The Effect of Underlayer Texture on Cu Film Orientation in Cu/Refractory-Metal Structure
- A Study of Via-Electromigration Failure in Multilevel Interconnection with High Temperature Sputtered Aluminum