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Ulsi Research Center Toshiba Corporation | 論文
- High-Definition Television (HDTV) Solid State Image Sensors (Special Issue on Opto-Electronics and LSI)
- Formation of Single-Crystal Al Interconnection by In Situ Annealing
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation : Lithography Technology
- Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
- Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
- Three-Terminal Silicon Esaki Tunneling Device
- Main-Field Stitching Accuracy Analysis in Electron Beam Writing Systems
- Effect of Coherence Factor σ and Shifter Arrangement for the Levenson-Type Phase-Shifting Mask
- A Soft X-Ray Microscope Using an Imaging Detector
- A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs (Special Issue on Low-Power LSI Technologies)
- High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing
- Shape Data Operations for VSB EB Data Conversion Using CAD Tools : Lithography Technology
- Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin Oxides
- Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
- Hot Electron Injection Characteristics in Asymmetrically Structured Submicron MOSFETs
- An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
- NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond
- Focused Ion Beam Assisted Etching of Quartz in XeF_2 without Transmittance Reduction for Phase Shifting Mask Repair