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Ulsi Research Center Toshiba Corporation | 論文
- Folded Bitline Architecture for a Gigabit-Scale NAND DRAM (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- Open/Folded Bit-Line Arrangement for Ultra-High-Density DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Standby/Active Mode Logic for Sub-1-V Operating ULSI Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Prebake Effects in Chemical Amplification Electron-Beam Resist : Resist and Processes
- Prebake Effects in Chemical Amplification Electron-Beam Resist
- Simulation Study on Phase-Shifting Masks for Isolated Patterns : Photolithography
- Simulation Study on Phase-Shifting Masks for Isolated Patterns
- Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions
- Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Evaluation of Shaping Gain Adjustment Accuracy Using Atomic Force Microscope in Variably Shaped Electron-Beam Writing Systems
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- A Bitline Control Circuit Scheme and Redundancy Technique for High-Density Dynamic Content Addressable Memories (Special Issue on LSI Memories)
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane