High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing
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概要
- 論文の詳細を見る
A new high-speed electron beam (EB) data conversion system has been developed for the variable-shaped beam EB reticle writing system EX-8. The target conversion rate from computer-aided design (CAD) data to EX-8 data is five reticles per hour for the class of 16-Mbit dynamic random access memory (DRAM) and beyond. To achieve this, both the hierarchical and parallel shape data operations and the parallel EB formatting have been adopted. Preprocesses for the hierarchical operations have been integrated, such as cell-overlap eliminations and the "doughnut process" which involves partially expanding shapes near cell boundaries. A 64-Mb DRAM design was successfully converted in the hierarchical method on an engineering workstation (EWS) with a single processor, and the number of processed shapes was reduced by four orders of magnitude and the average processing time was less than nine minutes. The processing time of the shape data operations for one layer of a 129 k gate array was reduced to l/3 when four processes were performed in parallel on an EWS with four processors.
- 社団法人応用物理学会の論文
- 1992-12-30
著者
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Sakamoto Shinji
Toshiba Microelectronics Corporation
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MAGOSHI Shunko
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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Ikenaga Osamu
Ulsi Research Center Toshiba Corporation
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Magoshi Shunko
Ulsi Research Center Toshiba Corporation
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KOYAMA Kiyomi
ULSI Research Center, Toshiba Corporation
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WATANABE Susumu
Semiconductor System Engineering Center, Toshiba Corporation
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SAITO Tamaki
Toshiba Microelectronics Corporation
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OOKI Shin-ichiro
Toshiba Microelectronics Corporation
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Watanabe Susumu
Semiconductor System Engineering Center Toshiba Corporation
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Koyama Kiyomi
Ulsi Research Center Toshiba Corporation
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IKENAGA Osamu
ULSI Research Center, Toshiba Corporation
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Sakamoto Shinji
Toshiba Micro Electronics Corporation, 1 Komukai-Toshiba cho, Saiwai-ku, Kawasaki 210
関連論文
- Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution
- Contamination Charging up Effect in a Variably Shaped Electron Beam Writer
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation : Lithography Technology
- High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing
- Shape Data Operations for VSB EB Data Conversion Using CAD Tools : Lithography Technology
- Character Projection EB Data Conversion System Combined with Throughput Analyzer
- Computer Aided Design Software for Designing Phase-Shifting Masks
- Large-Area Optical Proximity Correction with a Combination of Rule-Based and Simulation-Based Methods
- Shape Data Operations for VSB LB Data Conversion Using CAD Tools
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation