Hot Electron Injection Characteristics in Asymmetrically Structured Submicron MOSFETs
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概要
- 論文の詳細を見る
Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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Hamamoto Takeshi
Ulsi Research Center Toshiba Corporation
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Oowaki Yukihito
Ulsi Research Center Toshiba Corporation
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OKABE Naoko
ULSI Research Center, TOSHIBA Corporation
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TAKATO Hiroshi
ULSI Research Center, TOSHIBA Corporation
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NITAYAMA Akihiro
ULSI Research Center, TOSHIBA Corporation
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Okabe Naoko
Ulsi Research Center Toshiba Corporation
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Takato Hiroshi
Ulsi Research Center Toshiba Corporation
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Nitayama A
Ulsi Research Center Toshiba Corporation
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- Standby/Active Mode Logic for Sub-1-V Operating ULSI Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- A Bitline Control Circuit Scheme and Redundancy Technique for High-Density Dynamic Content Addressable Memories (Special Issue on LSI Memories)
- A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs (Special Issue on Low-Power LSI Technologies)
- Hot Electron Injection Characteristics in Asymmetrically Structured Submicron MOSFETs
- NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond