A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs (Special Issue on Low-Power LSI Technologies)
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概要
- 論文の詳細を見る
This paper proposes a small 1/4 Vcc bit-line swing scheme and a related sense amplifier scheme for low power 1V operating DRAM. Using the proposed small bit-line swing scheme, the stress bias of memory cell transistor and capacitor is reduced to half that of the conventional DRAM, resulting in improvement of device reliability. The proposed sense amplifier scheme achieves high speed and stable sensing/restoring operation at 250mV bit-line swing, which is much smaller than threshold voltage. The proposed scheme reduces the total power dissipation of bit-line sensing/restoring operation to 40% of the conventional one. This paper also proposes a small 4F^2 size memory cell and a new twisted bit-line scheme. The array noise is reduced to 8.6% of the conventional DRAM.
- 社団法人電子情報通信学会の論文
- 1996-12-25
著者
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WATANABE Shunji
Nikon Corporation
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TAKASHIMA Daisaburo
ULSI Research Laboratories, Toshiba Corporation
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OOWAKI Yukihito
ULSI Research Laboratories, Toshiba Corporation
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WATANABE Shigeyoshi
ULSI Research Laboratories, Toshiba Corporation
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OHSAWA Takashi
Microelectronics Engineering Laboratory, Toshiba Corporation
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OHUCHI Kazunori
ULSI Research Laboratories, Toshiba Corporation
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Tango Hiroyuki
ULSI Research Center, Toshiba Corporation
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Watanabe Souichi
The Niigata Institute Of Technology
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Ozaki T
Anritsu Measurement Solutions Atsugi‐shi Jpn
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Ozaki Tohru
Microelectronics Engineering Laboratory Toshiba Corporation
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Tango Hiroyuki
Ulsi Research Laboratories Toshiba Corporation
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Watanabe S
Fujitsu Lab. Ltd. Kawasaki‐shi Jpn
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OOWAKI Yukihito
Research amp Development Center, ULSI Research Laboratories, Toshiba Corporation
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OHUCHI Kazunori
Research amp Development Center, ULSI Research Laboratories, Toshiba Corporation
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Oowaki Yukihito
Research Amp Development Center Ulsi Research Laboratories Toshiba Corporation
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Oowaki Yukihito
Ulsi Research Center Toshiba Corporation
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Ohuchi Kazunori
Research Amp Development Center Ulsi Research Laboratories Toshiba Corporation
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INABA Tsuneo
Microelectronics Engineering Laboratory, Toshiba Corporation
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Inaba Tsuneo
Microelectronics Engineering Laboratory Toshiba Corporation
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Takashima D
Toshiba Corp. Yokohama‐shi Jpn
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Takashima Daisaburo
Ulsi Research Center Toshiba Corporation.
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Watanabe Shigeyoshi
Ulsi Research Center Toshiba Corporation.
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