Low-Power On-Chip Supply Voltage Conversion Scheme for Ultrahigh-Density DRAM's (Special Section on the 1992 VLSI Circuits Symposium)

概要

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In order to achieve 3.3-V 1-Gb DRAM and beyond, this paper proposes a new on-chip supply voltage conversion scheme, which converts 3.3-V external supply voltage V_<ext> to lowered 1.5-V internal supply voltage V_<int> without any power loss within the voltage converter. This scheme connects two identical DRAM circuits in series between V_<ext> and V_<ss>. By operations of two DRAM circuits with the same clock timing, the voltage between two DRAM's, V_<int>, is automatically fixed to 1 / 2V_<ext>. Therefore, each upper and lower DRAM circuit can operate at lowered 1 / 2V_<ext> without use of the conventional voltage converter. This scheme was successfully verified by an experimental system using 4-Mb DRAM's. Utilizing the proposed scheme, power dissipation was reduced by as much as 50% and stable operation was achieved without access speed penalty.
社団法人電子情報通信学会の論文
1993-05-25