Focused Ion Beam Assisted Etching of Quartz in XeF_2 without Transmittance Reduction for Phase Shifting Mask Repair

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概要

• 論文の詳細を見る

• Focused ion beam (FIB) assisted etching of quartz by a Ga FIB and XeF2 gas was studied for the purpose of avoiding the transmittance reduction by a Ga FIB. Transmittance was above 99% with the existence of XeF_2 to the extent that the etching yield was more than 1.7 times larger than that of sputtering. It was also found that postetching above 15 nm by a Ga FIB and XeF_2 gas after the Ga ion implantation recovered the transmittance. These techniques will be applied to repairing phase shifting masks without transmittance reduction.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Komano Haruki

  Ulsi Research Center Toshiba Corp

• Komano Haruki

  Ulsi Research Center Toshiba Corporation

• Ogasawara Munehiro

  Ulsi Research Center Toshiba Corporation

• NAKAMURA Hiroko

  ULSI Research Center, Toshiba Corporation

• Nakamura Hiroko

  Ulsi Research Center Toshiba Corporation

関連論文

• The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane
• Focused Ion Beam Assisted Etching of Quartz in XeF_2 without Transmittance Reduction for Phase Shifting Mask Repair
• Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
• Silicon Oxide Deposition into a Hole Using a Focused Ion Beam
• Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition : Beam Induced Physics and Chemistry
• Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

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