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Ulsi Research Center Toshiba Corporation | 論文
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam
- KrF Excimer Laser Process: Lateral and Surface Modification for Enhancing Resist Contrast
- Estimation of the Density and Roughness of Thin Monolayer Films by Soft X-Ray Reflectivity Measurements
- Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
- Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- A System for Detecting Metal Atoms Ejected from Solid Surfaces by Means of Multiphoton Resonance Ionization
- Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor
- Character Projection EB Data Conversion System Combined with Throughput Analyzer
- Computer Aided Design Software for Designing Phase-Shifting Masks
- Large-Area Optical Proximity Correction with a Combination of Rule-Based and Simulation-Based Methods
- Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via Plugs
- Shape Data Operations for VSB LB Data Conversion Using CAD Tools
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation
- Electron Mobility in Si Inversion Layers
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure