Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Gomei Y
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Gomei Yoshio
Ulsi Research Center Toshiba Corporation
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KOMANO Haruki
Research and Development Center, Toshiba Corporation
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Komano Haruki
Research And Development Center Toshiba Corporation
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Komano Haruki
Ulsi Research Center Toshiba Corp
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NAKAMURA Hiroko
ULSI Research Center, Toshiba Corporation
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NORIMATU Kenji
Semiconductor Division, Toshiba Corp.
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Norimatu Kenji
Semiconductor Division Toshiba Corp.
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Nakamura Hiroko
Ulsi Research Center Toshiba Corporation
関連論文
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- Analysis of Sub-0.15 μm Pattern Replication in Synchrotron Radiation Lithography
- Improvement in Optical Transparency of SiC Membrane by Modulating Source Gas Ratio in Chemical Vapor Deposition
- Mask Distortion Analysis for the Fabrication of 1 GBit Dynamic Random Access Memories by X-Ray Lithography
- Study on X-Ray Mask Distortion Applying Direct Bonding to Frame Mounting
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane : X-Ray Lithography
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane
- Focused Ion Beam Assisted Etching of Quartz in XeF_2 without Transmittance Reduction for Phase Shifting Mask Repair
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam
- Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition : Beam Induced Physics and Chemistry
- Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition