Microfabrication of X-Ray Absorber W Utilizing Al_2O_3 as an Etching Mask

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Shinji Sugihara

  Ulsi Research Center Toshiba Corporation

• ITOH Masamitsu

  ULSI Research Center, Toshiba Corporation

• GOMEI Yoshio

  ULSI Research Center, Toshiba Corporation

• Gomei Yoshio

  Ulsi Research Center Toshiba Corporation

• Itoh Masamitsu

  Ulsi Research Center Toshiba Corporation

関連論文

• Microfabrication of X-Ray Absorber W Utilizing Al_2O_3 as an Etching Mask
• Fabrication of an ultra Low Stress Tungsten Absorber for X-Ray Masks : Lithography Technology
• Effects of Mask Line-and-Space Ratio in Replicating near-0.1-μm Patterns in X-Ray Lithography
• Sub-0.15 μm Pattern Replication Using a Low-Contrast X-Ray Mask
• Analysis of Sub-0.15 μm Pattern Replication in Synchrotron Radiation Lithography
• The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane
• Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
• Silicon Oxide Deposition into a Hole Using a Focused Ion Beam
• Estimation of the Density and Roughness of Thin Monolayer Films by Soft X-Ray Reflectivity Measurements

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