Silicon Oxide Deposition into a Hole Using a Focused Ion Beam

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概要

• 論文の詳細を見る

• Focused ion beam (FIB)-induced deposition of silicon oxide in terms of filling a hole is reported. It was found that a vacant space was formed when an Ion beam was simply scanned through the hole area. To investigate the mechanism to form the vacancy, deposition on the sample, which has a step with a height of 0.8 μm, was carried out by using a Si^<2+> and a Be^<2+> ion beam. An extruded deposit resembling a pent roof was observed from the step ridge. The mechanism of the pent roof growth on the steplike sample was considered and the vacancy formation in the hole can be explained by the same mechanism. For silicon oxide, the high growth rate of the extruded deposit is thought to be the key to the vacancy formation. A useful way is proposed to fill the hole with silicon oxide with almost no vacancy.

• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Gomei Y

  Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn

• Gomei Yoshio

  Ulsi Research Center Toshiba Corporation

• KOMANO Haruki

  Research and Development Center, Toshiba Corporation

• Komano Haruki

  Research And Development Center Toshiba Corporation

• Komano Haruki

  Ulsi Research Center Toshiba Corp

• NAKAMURA Hiroko

  ULSI Research Center, Toshiba Corporation

• NORIMATU Kenji

  Semiconductor Division, Toshiba Corp.

• Norimatu Kenji

  Semiconductor Division Toshiba Corp.

• Nakamura Hiroko

  Ulsi Research Center Toshiba Corporation

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• Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
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• Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition : Beam Induced Physics and Chemistry
• Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

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