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Ulsi Device Development Division Nec Corporation | 論文
- Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
- Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography
- Recent Progress in Electron-Beam Cell Projection Techology
- Coulomb Interaction Effect in Cell Projection Lithography
- Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Luminescence from Thermally Oxidized Porous Silicon
- Luminescence Centers in Indium-Implanted Silicon
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- A 0.7-μm-Pitch Double Level Al Interconnection Technology for 1-Gbit DRAMs using SiO_2 Mask Al Etching and Plasma Enhanced Chemical Vapor Deposition SiOF
- Accurate Modeling Method for Cu Interconnect
- A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation
- Chip-Level Performance Improvement Using Triple Damascene Wiring Design Concept for the 0.13μm CMOS Generation and Beyond(Novel Device Architectures and System Integration Technologies)
- Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 μm ULSIs
- Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
- Quantum Effect in Sub-0.1μm MOSFET with Pocket Technologies and Its Relevance for the On-Current Condition