Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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MATSUDA Tomoko
ULSI Device Development Division, NEC Corporation
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Matsuda T
Ulsi Device Development Division Nec Corporation:(present)yokohama Research Center Association Of Su
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KITAJIMA Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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SHISHIGUCHI Seiichi
ULSI Device Development Division, NEC Corporation
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Matsuda Tomoko
Ulsi Device Development Division Nec Corporation
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KITAJIMA Hiroshi
ULSI Device Development Division, NEC Corporation
関連論文
- Luminescence Centers in Indium-Implanted Silicon
- Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- Effect of Organic Compounds on Gate Oxide Reliability
- Evaluation of Killer Particle Size in Deep Submicron Devices