Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
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YAMASAKI Shinya
ULSI Device Development Laboratories, NEC Corporation
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Yamasaki Shinya
Ulsi Device Development Laboratories Nec Corporation
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SHIRAMIZU Yoshimi
ULSI Device Development Laboratories, NEC Corporation
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TANAKA Masaru
ULSI Device Development Laboratories, NEC Corporation
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NAKAMORI Masaharu
ULSI Device Development Laboratories, NEC Corporation
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AOTO Nahomi
ULSI Device Development Laboratories, NEC Corporation
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KITAJIMA Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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Aoto Nahomi
Ulsi Device Development Laboratories Nec Corporation
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Shiramizu Yoshimi
Ulsi Device Development Laboratories Nec Corporation
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Nakamori Masaharu
Ulsi Device Development Laboratories Nec Corporation
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Kitajima Hiroshi
Ulsi Device Development Laboratories Nec Corporation
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Tanaka Masaru
Ulsi Device Development Laboratories Nec Corporation
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KITAJIMA Hiroshi
ULSI Device Development Division, NEC Corporation
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- Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Wafer Treatment Using Electrolysis-Ionized Water
- Effect of Organic Compounds on Gate Oxide Reliability
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