YAMASAKI Shinya | ULSI Device Development Laboratories, NEC Corporation
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概要
関連著者
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YAMASAKI Shinya
ULSI Device Development Laboratories, NEC Corporation
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Yamasaki Shinya
Ulsi Device Development Laboratories Nec Corporation
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林 康明
京都工芸繊維大学大学院
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林康 明
京都工芸繊維大学工芸学部電子情報工学科
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林 康明
京都工芸繊維大学大学院工芸科学研究科
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Hayashi Yutaka
Device Synthesis Section Electrotechnical Laboratory
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Hayashi Yuzo
Irie Koken Co. Ltd.
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Hayashi Y
Irie Koken Co. Ltd. Saitama Jpn
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Takewaki Toshiyuki
Nec Electronics Corporation
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SHIBA Kazutoshi
NEC Electronics Corporation
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KUBO Akira
NEC Electronics Corporation
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Kikuta Kuniko
Ulsi Device Development Laboratories Nec Corporation
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SHIBA Kazutoshi
Silicon Systems Research Laboratories, NEC Corporation
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WAKABAYASHI Hitoshi
Silicon Systems Research Laboratories, NEC Corporation
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TAKEWAKI Toshiyuki
ULSI Device Development Laboratories, NEC Corporation
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KUBO Akira
ULSI Device Development Laboratories, NEC Corporation
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HAYASHI Yoshihiro
Silicon Systems Research Laboratories, NEC Corporation
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Yamasaki S
Ulsi Device Development Laboratories Nec Corporation
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Shiba K
Nec Electronics Corporation
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Shiba Kazutoshi
Ulsi Device Development Division Nec Corporation
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Wakabayashi H
Taiyo Yuden Co. Ltd. Gunma Jpn
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Wakabayashi Hitoshi
Silicon Systems Research Laboratories Nec Corporation
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SHIRAMIZU Yoshimi
ULSI Device Development Laboratories, NEC Corporation
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TANAKA Masaru
ULSI Device Development Laboratories, NEC Corporation
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NAKAMORI Masaharu
ULSI Device Development Laboratories, NEC Corporation
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AOTO Nahomi
ULSI Device Development Laboratories, NEC Corporation
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KITAJIMA Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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Aoto Nahomi
Ulsi Device Development Laboratories Nec Corporation
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Shiramizu Yoshimi
Ulsi Device Development Laboratories Nec Corporation
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Nakamori Masaharu
Ulsi Device Development Laboratories Nec Corporation
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Kitajima Hiroshi
Ulsi Device Development Laboratories Nec Corporation
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Tanaka Masaru
Ulsi Device Development Laboratories Nec Corporation
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KITAJIMA Hiroshi
ULSI Device Development Division, NEC Corporation
著作論文
- Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 μm ULSIs
- Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs
- Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability