Reactions on Si(100) and Chemical Oxide Surfaces in Dissolved-Oxygen Controlled Deionized Water

概要

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This paper discusses the characteristics of Si and chemical oxide surfaces rinsed with deionized (DI) water with dissolved oxygen (DO) concentration ranging from 0.08ppm to 2.0ppm, controlled by N_2 bubbling, at temperatures ranging from 23℃ to 8O℃. From the aspect of electrochemistry, it is shown that the surface condition is determined by the balance of the simple reactions of oxidation and oxide etching, which proceed spontaneously and simultaneously on Si and chemical oxide surfaces. When the DO controlled DI water is used for rinsing after diluted HF (DHF) dipping before gate oxidation, the breakdown characteristics show no differences for different DI water conditions. Such surface sensitive control using DO controlled DI water, however, is thought to have other potential applications to surface treatment processes.
社団法人応用物理学会の論文
1998-02-15