Luminescence Centers in Indium-Implanted Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Matsuda T
Ulsi Device Development Division Nec Corporation
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TERASHIMA Koichi
Silicon Systems Research Laboratories. NEC Corporation
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MATSUDA Tomoko
ULSI Device Development Division, NEC Corporation
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Matsuda Tomoko
Ulsi Device Development Division Nec Corporation
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TERASHIMA Koichi
Silicon Systems Research Laboratories, NEC Corporation
関連論文
- Luminescence Centers in Indium-Implanted Silicon
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon