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Semiconductor Research Center Matsushita Electric Industrial Co. Ltd. | 論文
- A Novel High-Resolution Scanning Electron Microscope for the Surface Analysis of High-Aspect-Ratio Three-Dimensional Structures
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A Study of Carrier Concentration Profiles for Heavily Si-Implanted Semi-Insulating GaAs
- Radar Image Cross-Range Scaling Method-By Analysis of Picture Segments (Special Issue on Radar Technology)
- A New Approach of Fractal-Analysis Based Module Clustering for VLSI Placement (Special Section on VLSI Design and CAD Algorithms)
- 0.1 μm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam Lithography
- A Partial Scan Design Approach based on Register-Transfer Level Testability Analysis (Special Issue on Synthesis and Verification of Hardware Design)
- Initial Stage of GaN MBE Growth Studied by Ion Scattering and Recoiling Spectrometry
- SiO_2/Si Interfaces Studied by STM
- A Multi-Layer Channel Router Using Simulated Annealing (Special Section on VLSI Design and CAD Algorithms)
- Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication of Silicon Quantum Wires and Dots (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
- Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate
- Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
- High Speed MOS Multiplier and Divider Using Redundant Binary Representation and Their Implementation in a Microprocessor (Special Issue on Multiple-Valued Integrated Circuits)