Initial Stage of GaN MBE Growth Studied by Ion Scattering and Recoiling Spectrometry
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Kubo Minoru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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NOZAWA Katsuya
Semiconductor Group, Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. L
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Nozawa Katsuya
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
関連論文
- Infrared Absorption Spectra of C Local Mode in Si_Ge_xC_y Crystals : Semiconductors
- Initial Stage of GaN MBE Growth Studied by Ion Scattering and Recoiling Spectrometry