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Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. | 論文
- Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- Tunnel Structured Stacked Capacitor Cell (TSSC) with High Reliability for 64 Mbit dRAMs and Formation of Oxide-Nitride-Oxide Film (ONO) on 3-dimensionally (3d) Storage Electrode
- A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed Complementary-Metal-Oxide-Semiconductor
- Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon
- A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs
- Charge Buildup in Magnetized Process Plasma
- Characteristic Variation of Exposure Pattern in Cell-Projection Electron-Beam Lithography
- C-V Characteristics of Al/Vacuum-Evaporated-SiO_/GaAs Systems
- Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams
- Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscoty (SIMS)
- Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching
- RIE-Lag Reduction by NH_3 Addition in Aluminum Alloy Etching under BCl_3/Cl_2 Chemistry
- Lissajous Electron Plasma (LEP) Generation for Dry Etching
- An Npn AlGaAs/GaAs Collector-up HBT with an H^+ -Implanted High Resistivity Layer under the External p^+ -GaAs Base
- RF Glow Discharge and Ion Transport : Effects of Applied Frequency, Gas Pressure and Method of Power Coupling
- Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A Study of Carrier Concentration Profiles for Heavily Si-Implanted Semi-Insulating GaAs
- 0.1 μm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam Lithography