Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams
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概要
- 論文の詳細を見る
Reactive ion beam etching (RIBE) of InP using inclined Cl ion beams has been studied. Straight-sloping side walls of InP grooves are fabricated using those of SiO_2 as etching masks. By controlling the wall inclination of the SiO_2 mask and the etch rate ratio of InP to SiO_2, an InP groove with side-wall inclinations of 90° and 45° is obtained using one RIBE process. Furthermore, the walls of the groove are used for fabrication of the InGaAsP/InP surface-emitting Baser with a Fabry-Perot resonator and a 45° mirror. A threshold current of 40 mA is obtained for the laser under continuous-wave operation at room temperature.
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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MUTOH Katsuhiko
Matsushita Research Institute Tokyo, Inc.
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Mutoh Katsuhiko
Matsushita Research Institute Tokyo Inc.
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WAKABAYASHI Shin-ichi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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TOYODA Yukio
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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NAKAJIMA Masato
Matsushita Research Institute Tokyo, Inc.
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Toyoda Y
Chubu Univ. Aichi Jpn
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Wakabayashi S
Omron Corp. Ibaraki Jpn
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Nakajima Masato
Matsushita Research Institute Tokyo Inc.
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