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Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. | 論文
- Enhanced Interdiffusion in the Al-Si System during Ar Ion Bombardment
- Asymmetrical Profiles of Ion Implanted Phosphorus in Silicon
- A Partial Scan Design Approach based on Register-Transfer Level Testability Analysis (Special Issue on Synthesis and Verification of Hardware Design)
- SiO_2/Si Interfaces Studied by STM
- A Multi-Layer Channel Router Using Simulated Annealing (Special Section on VLSI Design and CAD Algorithms)
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- High Speed MOS Multiplier and Divider Using Redundant Binary Representation and Their Implementation in a Microprocessor (Special Issue on Multiple-Valued Integrated Circuits)
- Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
- Identification of the Particle Source in LSI Manufacturing Process Equipment (Special Issue on Quarter Micron Si Device and Process Technologies)
- PIG-Type Compact Microwave Metal Ion Source
- Quantizer Neuron Chip (QNC) with Multichip Extendable Architecture (Special Issue on Super Chip for Intelligent Integrated Systems)
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
- A Video-Rate 10-b Triple-Stage Bi-CMOS A/D Converter (Special Issue on Multimedia, Analog and Processing LSIs)
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices