A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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OGURA M.
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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Nakabayashi T.
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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ARAI M.
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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YABU T.
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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MATSUO I.
Kyoto Research Laboratory, Matsushita Electronics Corporation
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KANDA A.
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Yamada T.
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Kanda A.
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Kanda A.
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
関連論文
- New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices
- Source resistance reduction of AlGaN/GaN HFET using novel superlattice cap layer