New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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Nakaoka H.
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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MIZUNO B.
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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TAKASE M.
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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HORI A.
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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NAKAYAMA I.
Production Engineering Lab, Matsushita Electric Industrial, Co., Ltd.
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OGURA M.
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
関連論文
- New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices