Source resistance reduction of AlGaN/GaN HFET using novel superlattice cap layer
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kanda A.
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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MURATA T.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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HIKITA M.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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HIROSE Y.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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UEMOTO Y.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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TANAKA T.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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INOUE K.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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UEDA D.
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Uemoto Y.
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Hikita M.
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
関連論文
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices
- Source resistance reduction of AlGaN/GaN HFET using novel superlattice cap layer