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Research and Development Center, TOSHIBA Corporation | 論文
- Velocity Overshoot and G_m Limitation in sub-0.1μm Fully-Depleted SOI-MOSFETs
- Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
- Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm
- High-Density and High-Carrier-to-Noise-Ratio Optical Disk Mastering : High Density Recording
- High-Density and High-Carrier-to-Noise-Ratio Optical Disk Mastering
- Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process
- Silicon Oxide Deposition into a Hole Using a Focused Ion Beam
- Lead Perovskite Relaxor-Based Low-Loss Ceramic Dielectric for High-Voltage Ceramic Capacitors : Ferroelectrics
- Sonar-Based Behaviors for a Behavior-Based Mobile Robot (Special Issue on Image Processing and Understanding)
- H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
- Line Fitting Method for Line Drawings Based on Contours and Skeletons (Special Issue on Document Analysis and Recognition)
- A Design Method of a Reconfigurable Direct Radiating Array Antenna
- Numerical Prediction for 2 GHz RF Amplifier of SOI Power MOSFET
- Effective species in inductively coupled nitrogen plasma for silicon nitriding
- Congestion Control for ABR Service Based on Dynamic UPC/NPC
- Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
- An Offset-Compensated CMOS Programmable Gain Amplifier (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- Interface Structure of P-Type GaP/Au/Au-Zn
- Comparison of Electroluminescence and Photoluminescence Efficiencies of Organic Electroluminescent Devices Having a Bilayer Structure