Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates

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概要

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• Metalorganic chemical vapor deposition (MOCVD) growth of AlN, GaN and AlGaN on sapphire substrates was investigated, with the aim of realizing high-quality heterostructures with atomically smooth interfaces. AlN with surfaces constructed of single-atomic-layer steps was grown by the two-step growth technique, in which the thin first layer was grown at a low temperature (1250℃) and then the second layer was grown at a high temperature (1350℃). GaN with surfaces consisting of simple atomic-layer steps were successively grown on the AlN layer by optimizing the growth conditions. Marked degradation of surface flatness was not observed for Al_<0.2>Ga_<0.8>N growth on GaN.

• 社団法人応用物理学会の論文
• 1997-12-01

著者

• Ohba Yasuo

  Research And Development Center Toshiba Corporation

• YOSHIDA Hiroaki

  Research and Development Center, Toshiba Corporation

• Sato Rie

  Research And Development Center Toshiba Corporation

• Yoshida Hiroaki

  Research And Development Center Toshiba Corporation

関連論文

• Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
• Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
• Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
• H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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