H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition

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概要

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• H-atom incorporation was studied for Mg-doped GaN grown by metalorganic chemical vapor deposition. H-atom incorporation was found to increase linearly with Mg concentration, suggesting the formation of simple complex between Mg and H atoms in GaN. Decrease of H-atom concentration was observed after thermal treatment in Ar, supporting the hypothesis that H-atom extraction plays an important role in obtaining low-resistivity p-type conduction.

• 社団法人応用物理学会の論文
• 1994-10-01

著者

• Ohba Yasuo

  Research And Development Center Toshiba Corporation

• Hatano A

  Toshiba Corp. Kawasaki Jpn

• HATANO Ako

  Research and Development Center, Toshiba Corporation

• Hatano Ako

  Research And Development Center Toshiba Corporation

関連論文

• Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
• Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
• Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
• H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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