Ohba Yasuo | Research And Development Center Toshiba Corporation

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著作論文

Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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