Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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概要

• 論文の詳細を見る

• Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300℃ was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.

• 社団法人応用物理学会の論文
• 1996-08-15

著者

• Ohba Yasuo

  Research And Development Center Toshiba Corporation

• HATANO Ako

  Research and Development Center, Toshiba Corporation

• Hatano Ako

  Research And Development Center Toshiba Corporation

• OHBA Yasuo

  Research and Development Center, Toshiba Corporation

関連論文

• Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
• Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
• Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
• H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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