Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers

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概要

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• High-Al-composition AlGaN/GaN double-heterolaser structures were fabricated on sapphire substrates using single crystalline AlN buffer layers. Structures having Al_<0.25>Ga_<0.75>N cladding layers with a 2-μm total thickness were grown without cracks. Device performance was mainly investigated for the structure with Al_<0.2>Ga_<0.8>N cladding layers and a multiquantum-well-structure active layer. Optical emission was intense for devices with a multiquantum-well-structured active layer. However, no sign of stimulated emission was observed in this study.

• 社団法人応用物理学会の論文
• 1998-08-01

著者

• Ohba Y

  Research And Development Center Toshiba Corporation

• Ohba Yasuo

  Research And Development Center Toshiba Corporation

• YOSHIDA Hiroaki

  Research and Development Center, Toshiba Corporation

• Yoshida Hiroaki

  Research And Development Center Toshiba Corporation

関連論文

• Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition
• Fabrication and Characterization of AlGaN/GaN Double-Heterolaser Structures on Sapphire Substrates Using Single Crystalline AIN Buffer Layers
• Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices
• H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

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